|
|
Imagem
|
Código
|
Part Number
e Fabricante
|
Descrição
|
Informações
Técnicas
|
ROHS
|
Estoque
|
Un.
|
Preço
|
Qtd.
|
|
|
|
78K6093
|
MPF102_D27Z
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR JFET -25V TO-92
N CHANNEL JFET -25V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-25V; Gate-Source Cutoff Voltage Vgs(off) Max:-8V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
|
|
|
|
SIM
|
|
Local
304
|
Intern*
0
|
UN
|
R$ 0,34
UN
|
|
|
|
|
58K9646
|
2N5952
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR JFET 8MA 30V TO-92
N CHANNEL JFET -30V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Gate-Source Cutoff Voltage Vgs(off) Max:-3.5V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Current Rating:8mA
|
|
|
|
SIM
|
|
Local
292
|
Intern*
3981
|
UN
|
R$ 0,66
UN
|
|
|
|
|
58K2812
|
2N5462
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR P 40V 3-TO-92
P CHANNEL JFET 40V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Gate-Source Cutoff Voltage Vgs(off) Max:9V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Current Rating:10mA
|
|
|
|
SIM
|
|
Local
162
|
Intern*
903
|
UN
|
R$ 0,45
UN
|
|
|
|
|
58K8917
|
J111
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR JFET N 35V 50MA TO-92
N CHANNEL JFET -35V TO-92; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Breakdown Voltage Vbr:-35V; Gate-Source Cutoff Voltage Vgs(off) Max:-10V; Leaded Process Compatible:Yes
|
|
|
|
SIM
|
|
Local
92
|
Intern*
5370
|
UN
|
R$ 0,44
UN
|
|
|
|
|
58K2811
|
2N5461
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR TO-92 10MA 10V
P CHANNEL JFET 40V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Gate-Source Cutoff Voltage Vgs(off) Max:7.5V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Current Rating:10mA
|
|
|
|
SIM
|
|
Local
84
|
Intern*
3120
|
UN
|
R$ 0,45
UN
|
|
|
|
|
58K1757
|
J113
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR MOSFET NPN JFET TO-92
N CHANNEL JFET -35V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-35V; Zero Gate Voltage Drain Current Idss:2mA; Gate-Source Cutoff Voltage Vgs(off) Max:-3V; Power Dissipation Pd:625mW
|
|
|
|
SIM
|
|
Local
80
|
Intern*
555
|
UN
|
R$ 0,45
UN
|
|
|
|
|
58K8918
|
J112
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR JFET -35V TO-92
N CHANNEL JFET -35V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-35V; Zero Gate Voltage Drain Current Idss:5mA; Gate-Source Cutoff Voltage Vgs(off) Max:-5V; Power Dissipation Pd:350mW
|
|
|
|
SIM
|
|
Local
50
|
Intern*
1670
|
UN
|
R$ 0,44
UN
|
|
|
|
|
06J8868
|
2N4416-E3
VISHAY SILICONIX
|
TRANSISTOR JFET TO-72
N CHANNEL JFET -36V TO-206AF; Breakdown Voltage Vbr:-36V; Gate-Source Cutoff Voltage Vgs(off) Max:-6V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:4; Leaded Process Compatible:Yes
|
|
|
|
SIM
|
|
Local
37
|
Intern*
25
|
UN
|
R$ 24,83
UN
|
|
|
|
|
58K1755
|
J108
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR JFET N 0.65W TO-92
N CHANNEL JFET -25V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-25V; Gate-Source Cutoff Voltage Vgs(off) Max:-10V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Current Rating:80mA
|
|
|
|
SIM
|
|
Local
34
|
Intern*
390
|
UN
|
R$ 0,81
UN
|
|
|
|
|
58K2052
|
PN4392
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR JFET NPN 5V TO-92
N CHANNEL JFET -30V TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Gate-Source Cutoff Voltage Vgs(off) Max:-5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
|
|
|
|
SIM
|
|
Local
34
|
Intern*
12452
|
UN
|
R$ 0,38
UN
|
|
|
|
|
45J1521
|
MMBFU310LT1G
ON SEMICONDUCTOR
|
TRANSISTOR JFET SOT-23
N CHANNEL JFET -25V SOT-23; Transistor Type:JFET; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss:24mA to 60mA; Gate-Source Cutoff Voltage Vgs(off) Max:-6V; Power Dissipation Pd:225mW
|
|
|
|
SIM
|
|
Local
31
|
Intern*
2536
|
UN
|
R$ 0,75
UN
|
|
|
|
|
18C7377
|
MMBF5484
FAIRCHILD SEMICONDUCTOR
|
TRANSISTOR MOSFET SMD 10MA 25V
N CHANNEL JFET -25V SOT-323; Transistor Type:JFET; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss:5mA; Gate-Source Cutoff Voltage Vgs(off) Max:-3V; Power Dissipation Pd:225mW
|
|
|
|
SIM
|
|
Local
30
|
Intern*
5670
|
UN
|
R$ 0,35
UN
|
|